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USE OF EHRENBERG'S APPROXIMATION IN ANALYTICAL SOLUTION OF SEMICONDUCTOR BARRIERS IN WEAK INVERSION AND ACCUMULATION.HAMPSHIRE MJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 580-581; BIBL. 3 REF.Article

A NEW APPROACH TO THE ANALYSIS OF HETEROSTRUCTURES.HAMPSHIRE MJ.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 1; PP. 247-256; ABS. ALLEM.; BIBL. 4 REF.Article

PHOTOVOLTAIC RESPONSE OF N-N GE-SI HETERODIODES.HAMPSHIRE MJ; CROOKS JR.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 18; PP. 2491-2501; H.T. 3; BIBL. 9 REF.Article

A STUDY OF THE INTERFACE BETWEEN GERMANIUM AND SILICON.CROOKS JR; HAMPSHIRE MJ.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 4; PP. 643-657; BIBL. 5 REF.Article

MOS CHARACTERISTICS AT LOW TEMPERATURES.MAK MK; HAMPSHIRE MJ.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 17; PP. L191-L195; BIBL. 3 REF.Article

THE OBSERVATION OF ENERGY TRANSITIONS FROM LOWER VALENCE BAND STATES IN CUGASE2THWAITES MJ; TOMLINSON RD; HAMPSHIRE MJ et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 7; PP. 727-728; BIBL. 11 REF.Article

THE OBSERVATION OF A DIRECT ENERGY BAND GAP FOR CUINTE2 SINGLE CRYSTALS USING ELECTROREFLECTANCE TECHNIQUES.THWAITES MJ; TOMLINSON RD; HAMPSHIRE MJ et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 12; PP. 905-906; BIBL. 11 REF.Article

ELECTRICAL PROPERTIES OF CUINSE2 SINGLE CRYSTALSPARKES J; TOMLINSON RD; HAMPSHIRE MJ et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 773-777; BIBL. 15 REF.Serial Issue

THE OBSERVATION OF OPTICAL TRANSITIONS FROM VALENCE BAND STATES IN CUINTE2THWAITES MJ; TOMLINSON RD; HAMPSHIRE MJ et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 1; PP. 211-214; ABS. GER; BIBL. 14 REF.Article

LIVE PEAK-STRIPPING DURING X-RAY ENERGY-DISPERSIVE ANALYSISPARKES J; RABBITT LJ; HAMPSHIRE MJ et al.1974; ANAL. CHEM.; U.S.A.; DA. 1974; VOL. 46; NO 12; PP. 1830-1831Article

A SENSITIVE METHOD OF HALL MEASUREMENTLOMAS RA; HAMPSHIRE MJ; TOMLINSON RD et al.1972; J. PHYS. E; G.B.; DA. 1972; VOL. 5; NO 8; PP. 819-822; BIBL. 7 REF.Serial Issue

CRYSTAL DATA FOR CUGASE2.MANDEL L; TOMLINSON RD; HAMPSHIRE MJ et al.1977; J. APPL. CRYSTALLOGR.; DENM.; DA. 1977; VOL. 10; NO 2; PP. 130-131; BIBL. 11 REF.Article

A NUMERICAL MODEL OF A GRADED BAND GAP CDSXTE1-X SOLAR CELLRADOJCIC R; HILL AE; HAMPSHIRE MJ et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 4; NO 2; PP. 109-120; BIBL. 14 REF.Article

THE FABRICATION AND DOPING OF SINGLE CRYSTALS OF CUGASE2.MANDEL L; TOMLINSON RD; HAMPSHIRE MJ et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 36; NO 1; PP. 152-156; BIBL. 17 REF.Article

PREPARATION AND PROPERTIES OF GRADED BAND GAP CDSXTE1-X THIN FILM SOLAR CELLSRADOJCIC R; HILL AE; HAMPSHIRE MJ et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 4; NO 2; PP. 121-126; BIBL. 9 REF.Article

PREPARATION AND PROPERTIES OF MIXED CDSXTE1-X THIN FILMSRADOJCIC R; HILL AE; HAMPSHIRE MJ et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 4; NO 2; PP. 101-107; BIBL. 8 REF.Article

HOMOJUNCTION FABRICATION IN CUINSE2 BY COPPER DIFFUSION.TOMLINSON RD; ELLIOTT E; PARKES J et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 383; BIBL. 4 REF.Article

THE GROWTH AND DOPING OF SINGLE CRYSTALS OF CUINTE2TOMLINSON RD; ELLIOTT E; HAWORTH L et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 115-119; BIBL. 18 REF.Article

SOME OBSERVATIONS ON THE EFFECT OF EVAPORATION SOURCE TEMPERATURE ON THE COMPOSITION OF CUINSE2 THIN FILMSTOMLINSON RD; OMEZI D; PARKES J et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 65; NO 2; PP. L3-L6; BIBL. 13 REF.Article

ELECTRICAL PROPERTIES OF CUGASE2 SINGLE CRYSTALSMANDEL L; TOMLINSON L; HAMPSHIRE MJ et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 3; PP. 201-204; BIBL. 19 REF.Article

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